A new method of formation of the masking image (relief) directly during the electron-beam exposure of the resist

Author： Bruk M. Zhikharev E. Kal’nov V. Spirin A. Strel’tsov D.

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.42, Iss.5, 2013-09, pp. : 261-269

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