The effect of the Mn delta layer on the photosensitivity spectra of structures with In _x Ga_{1 − x} As/GaAs quantum wells

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MAIK Nauka/Interperiodica

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BIEXCITONIC NONLINEARITY IN GaAs/GaxAl1-xAs QUANTUM WELLS AND WIRES

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Photoluminescence and dark current of p-doped InGaAs/Al x Ga 1- x As strained multiple quantum wells

By Zhang D.H.   Yoon S.F.   Radhakrishnan K.   Han Z.Y.  

Superlattices and Microstructures, Vol. 20, Iss. 1, 1996-01 ,pp. : 105-110

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Exciton relaxation in Ga_{1 - x} In_x As/GaAs self-organized quantum dots

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Drift velocity of electrons in quantum wells of selectively doped In 0.5 Ga 0.5 As/Al x In 1 − x As and In 0.2 Ga 0.8 As/Al x Ga 1 − x As heterostructures in high electric fields

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Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. : 761-765

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