Drift velocity of electrons in quantum wells of selectively doped In 0.5 Ga 0.5 As/Al x In 1 − x As and In 0.2 Ga 0.8 As/Al x Ga 1 − x As heterostructures in high electric fields

Author： Požela J.   Požela K.   Raguotis R.   Jucienė V.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7826

Source： Semiconductors, Vol.45, Iss.6, 2011-06, pp. : 761-765

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