Author： Takeuchi M. Takeuchi T. Inoue Y. Kato T. Inoue K. Nakashima H. Maehashi K. Fischer P. Christen J. Grundmann M. Bimberg D.
Publisher： Academic Press
ISSN： 0749-6036
Source： Superlattices and Microstructures, Vol.22, Iss.1, 1997-07, pp. : 43-49
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Abstract
GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower growth temperature (=~ 500 #° C) is suitable for giant step formation and higher growth temperature (=~ 550 #° C) is better for large thickness modulation. Therefore, two-step growth is employed to improve the uniformity and confinement energies of quantum wire structures, which are confirmed by TEM and AFM observations and photo- and cathodoluminescence measurements.
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