A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires

By Tsetseri M.   Triberis G.P.   Voliotis V.   Grousson R.  

Superlattices and Microstructures, Vol. 29, Iss. 5, 2001-05 ,pp. : 367-377

Academic Press

Access to resources Recommend Favorite

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

By Jun-Da Yan   Quan Wang   Xiao-Liang Wang   Hong-Ling Xiao   Li-Juan Jiang   Hai-Bo Yin   Chun Feng   Cui-Mei Wang   Shen-Qi Qu   Jia-Min Gong   Bo Zhang   Bai-Quan Li   Zhan-Guo Wang   Xun Hou  

Chinese Physics Letters, Vol. 32, Iss. 12, 2015-12 ,pp. : 127301-127304

IOP Publishing

Access to resources Recommend Favorite

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-579-C4-582

Edp Sciences

Access to resources Recommend Favorite

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

By Yuan-Jie Lv   Zhi-Hong Feng   Guo-Dong Gu   Jia-Yun Yin   Yu-Long Fang   Yuan-Gang Wang   Xin Tan   Xing-Ye Zhou   Zhao-Jun Lin   Zi-Wu Ji   Shu-Jun Cai  

Chinese Physics B, Vol. 24, Iss. 8, 2015-08 ,pp. : 87306-87310

IOP Publishing

Access to resources Recommend Favorite

Detection mechanisms of terahertz radiation in a short gate In0.3Ga0.7As/In0.53Al0.47As field effect transistor

By  

Journal of Physics: Conference Series , Vol. 193, Iss. 1, 2009-11 ,pp. : 322-325

IOP Publishing

Access to resources Recommend Favorite