Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

By Yuan-Jie Lü   Zhi-Hong Feng   Zhao-Jun Lin   Hong-Yu Guo   Guo-Dong Gu   Jia-Yun Yin   Yuan-Gang Wang   Peng Xu   Xu-Bo Song   Shu-Jun Cai  

Chinese Physics B, Vol. 23, Iss. 7, 2014-07 ,pp. : 77105-77108

IOP Publishing

Access to resources Recommend Favorite

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors

By Ying-Xia Yu   Zhao-Jun Lin   Chong-Biao Luan   Yuan-Jie Lü   Zhi-Hong Feng   Ming Yang   Yu-Tang Wang  

Chinese Physics B, Vol. 23, Iss. 4, 2014-04 ,pp. : 47201-47204

IOP Publishing

Access to resources Recommend Favorite

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

By  

Chinese Physics B, Vol. 24, Iss. 11, 2015-11 ,pp. : 117103-117106

IOP Publishing

Access to resources Recommend Favorite

Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE

By Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovskii L.   Velikovskii I.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chalyi V.  

Technical Physics Letters, Vol. 31, Iss. 10, 2005-10 ,pp. : 864-867

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

By Xiao-Hua Ma   Min Lü   Lei Pang   Yuan-Qi Jiang   Jing-Zhi Yang   Wei-Wei Chen   Xin-Yu Liu  

Chinese Physics B, Vol. 23, Iss. 2, 2014-02 ,pp. : 27302-27306

IOP Publishing

Access to resources Recommend Favorite