Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSbp-InAs single heterojunctions

Author： Mikhailova M.P.   Voronina T.I.   Lagunova T.S.   Moiseev K.D.   Obukhov S.A.   Rozov A.E.   Yakovlev Y.P.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.24, Iss.1, 1998-07, pp. : 105-110

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