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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors

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AlGaN Channel High Electron Mobility Transistors with an Al_xGa_1−xN/GaN Composite Buffer Layer

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