Low temperature hole mobility in strained p-SiSi1 x Gex p-Si selectively doped double heterojunctions

Author: Hionis G.   Triberis G.P.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.24, Iss.1, 1998-07, pp. : 33-40

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Abstract