Related content

Low temperature hole mobility in strained p-SiSi1 x Gex p-Si selectively doped double heterojunctions

By Hionis G.   Triberis G.P.  

Superlattices and Microstructures, Vol. 24, Iss. 1, 1998-07 ,pp. : 33-40

Academic Press

Access to resources Recommend Favorite

High mobility Si1-xGex PMOS transistors to 5K

By  

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-69-C6-74

Edp Sciences

Access to resources Recommend Favorite

Determination of conduction band edge characteristics of strained Si/Si 1-x Ge x

By Jian-Jun Song   He-Ming Zhang   Hui-Yong Hu   Xian-Ying Dai   Rong-Xi Xuan  

Chinese Physics, Vol. 16, Iss. 12, 2007-12 ,pp. : 3827-3831

IOP Publishing

Access to resources Recommend Favorite

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack

By Xue-Feng Zhang   Jing-Ping Xu   Pui-To Lai   Chun-Xia Li   Jian-Guo Guan  

Chinese Physics, Vol. 16, Iss. 12, 2007-12 ,pp. : 3820-3826

IOP Publishing

Access to resources Recommend Favorite

Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO₃ Gate Dielectric

By Wen-Jie Yu   Bo Zhang   Chang Liu   Zhong-Ying Xue   Ming Chen   Qing-Tai Zhao  

Chinese Physics Letters, Vol. 31, Iss. 1, 2014-01 ,pp. : 16101-16104

IOP Publishing

Access to resources Recommend Favorite