Aδ-doped In_0.24Ga_0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

By Lee C-S.   Hsu W-C.   Li S.S.   Ho P.  

Superlattices and Microstructures, Vol. 29, Iss. 5, 2001-05 ,pp. : 329-334

Academic Press

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Magnetotransport in modulation-doped In_0.53Ga_0.47As/In_{0. 52}Al_0.48As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons

By Tiras E.   Cankurtaran M.   Çelik H.   Thoms A.B.   Balkan N.  

Superlattices and Microstructures, Vol. 29, Iss. 2, 2001-02 ,pp. : 147-167

Academic Press

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Nonparabolic tendency of electron effective mass estimated by confined states in In_0.53Ga_0.47As/In_{0. 52}Al_0.48As multi-quantum-well structures

By Tanaka K.   Kotera N.   Nakamura H.  

Superlattices and Microstructures, Vol. 26, Iss. 1, 1999-07 ,pp. : 17-22

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Stokes shift in one-side modulation-n-doped-strained Ga_xIn_{1 - x}As/InP asymmetric quantum well

By Fanyao Q.   Fonseca A.L.A.   Nunes O.A.C.  

Superlattices and Microstructures, Vol. 26, Iss. 6, 1999-12 ,pp. : 377-394

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Electronic subband of single Siδ-doped GaAs structures

By Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

Superlattices and Microstructures, Vol. 28, Iss. 1, 2000-07 ,pp. : 35-45

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