Magnetotransport in modulation-doped In_0.53Ga_0.47As/In_{0. 52}Al_0.48As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons

By Tiras E.   Cankurtaran M.   Çelik H.   Thoms A.B.   Balkan N.  

Superlattices and Microstructures, Vol. 29, Iss. 2, 2001-02 ,pp. : 147-167

Academic Press

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Observation of confined states in anIn_0.53Ga_0.47As/In_0.52 Al_0.48Asmulti-quantum wells structure by quantum confined Stark effects

By Tanaka K.   Murata T.   Kotera N.   Nakamura H.  

Superlattices and Microstructures, Vol. 29, Iss. 2, 2001-02 ,pp. : 91-98

Academic Press

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Study of In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P doubleδ-doped heterojunction bipolar transistor

By Wang W-C.   Chen J-Y.   Pan H-J.   Feng S-C.   Yu K-H.   Liu W-C.  

Superlattices and Microstructures, Vol. 26, Iss. 1, 1999-07 ,pp. : 23-33

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Aδ-doped In_0.24Ga_0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

By Lee C-S.   Hsu W-C.   Li S.S.   Ho P.  

Superlattices and Microstructures, Vol. 29, Iss. 5, 2001-05 ,pp. : 329-334

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Exciton binding energies in GaN/Al_xGa_{1 - x}N pseudomorphic quantum wells

By Jeon J.   Sanders G.D.   Kim K.W.   Littlejohn M.A.  

Superlattices and Microstructures, Vol. 27, Iss. 1, 2000-01 ,pp. : 53-58

Academic Press

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