Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

By Huguet-Garcia Juan   Jankowiak Aurélien   Miro Sandrine   Podor Renaud   Meslin Estelle   Thomé Lionel   Serruys Yves   Costantini Jean-Marc  

EPJ Nuclear Sciences & Technologies, Vol. 1, Iss. issue, 2015-12 ,pp. : 8-8

Edp Sciences

Access to resources Recommend Favorite

Comportement en traction et en oxydation de fibres SiC

By Cabet C.   Colin C.   Maxel M.   Robin C.   Gélébart L.   Bosonnet S.   Pasquier S.   Duprey B.  

Matériaux & Techniques, Vol. 99, Iss. 1, 2011-06 ,pp. : 121-125

Edp Sciences

Access to resources Recommend Favorite

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

By Müller St. G.   Sumakeris J. J.   Brady M. F.   Glass R. C.   Hobgood H. McD.   Jenny J. R.   Leonard R.   Malta D. P.   Paisley M. J.   Powell A. R.   Tsvetkov V. F.   Allen S. T.   Das M. K.   Palmour J. W.   Carter C. H.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 29-35

Edp Sciences

Access to resources Recommend Favorite

Modelling, analysis, and experimental study of SiC JFET body diode

By Ben Salah T.   Lahbib Y.   Morel H.  

EPJ Applied Physics (The), Vol. 53, Iss. 1, 2010-12 ,pp. : 10301-10301

Edp Sciences

Access to resources Recommend Favorite

Reactive etching of SiC by energetic CF₃: molecular dynamics simulation

By Gou F.   Chen Z.   Zhiqian C.  

EPJ Applied Physics (The), Vol. 38, Iss. 2, 2007-03 ,pp. : 129-134

Edp Sciences

Access to resources Recommend Favorite