Analysis of dark current dependent upon threading dislocations in Ge/Si heterojunction photodetectors

By Wei Ying   Cai Xueyuan   Ran Jinzhi   Yang Jianhong  

Microelectronics International, Vol. 29, Iss. 3, 2012-07 ,pp. : 136-140

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

By Twigg M.  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 743-746

Springer Publishing Company

Access to resources Recommend Favorite

Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography

By Yamaguchi Hirotaka  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 715-718

Springer Publishing Company

Access to resources Recommend Favorite

Ge/Si heterostructures with coherent Ge quantum dots in silicon for applications in nanoelectronics

By Pchelyakov O P   Dvurechensky A V   Latyshev A V   Aseev A L  

Semiconductor Science and Technology, Vol. 26, Iss. 1, 2011-01 ,pp. : 14027-14030

IOP Publishing

Access to resources Recommend Favorite

Electrical properties of W/Si interfaces with embedded Ge/Si islands

By Hattab A.   Meyer F.   Yam V.   Bouchier D.   Meyer R.   Schneegans O.   Clerc C.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 240-245

Elsevier

Access to resources Recommend Favorite