Stress Mapping in Silicon: Advantages of Using a Raman Spectrometer with a Single Dispersive Stage

Author: Bonera E.   Fanciulli M.   Batchelder D. N.  

Publisher: Society for Applied Spectroscopy

ISSN: 0003-7028

Source: Applied Spectroscopy, Vol.56, Iss.5, 2002-05, pp. : 560-563

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Abstract