Quantum-aperture formation in a quasi-ballistic MESFET by neutron irradiation

By Gromov V.   Kitaev M.   Kiseleva E.   Kozlov V.   Obolenskii S.   Shukailo V.  

Russian Microelectronics, Vol. 34, Iss. 6, 2005-11 ,pp. : 359-364

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/f Noise Measurements

By Belyakov A.   Moryashin A.   Perov M.   Yakimov A.   Vandamme L.  

Radiophysics and Quantum Electronics, Vol. 48, Iss. 3, 2005-03 ,pp. : 240-245

Springer Publishing Company

Access to resources Recommend Favorite

Optimization of submicrometre GaAs MESFET for improved performance

By Chhokra Sunita A.   Gupta R. S.  

International Journal of Electronics, Vol. 85, Iss. 2, 1998-08 ,pp. : 129-144

Taylor & Francis Ltd

Access to resources Recommend Favorite

GaAs and AlGaAs photodiodes for ionizing radiation detectors

By Andreev V.M.   Milanova M.M.   Khvostikov V.P.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1835-1841

Elsevier

Access to resources Recommend Favorite

GaAs FET Current-Mode Integrators and Their Application to Filters

By Takai N.   Fujii N.  

Analog Integrated Circuits and Signal Processing, Vol. 25, Iss. 3, 2000-12 ,pp. : 271-279

Springer Publishing Company

Access to resources Recommend Favorite