SOI Process Using Chemical Treatment and Bonding of Si Wafers

Author： Timoshenkov S. P.   Kalugin V. V.   Prokopiev E. P.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.33, Iss.4, 2004-07, pp. : 241-245

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract

An SOI process including wafer bonding and splitting is developed and evaluated by experiment. Trial SOI wafers are fabricated and characterized. It is concluded that such wafers might serve as a starting point for making radiation-hardened, thermally stable ICs and special-purpose sensors and MEMS.

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