Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

Author： Gadoev S.   Skorobogatov P.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.34, Iss.6, 2005-11, pp. : 383-385

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