Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

By Gadoev S.   Skorobogatov P.  

Russian Microelectronics, Vol. 34, Iss. 6, 2005-11 ,pp. : 383-385

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Silicon MOS controlled bipolar power switching devices using trench technology

By Trajkovic T.   Udrea F.   Amaratunga G. A. J.   Milne W. I.   Chan S. S. M.   Waind P. R.   Thomson J.   Crees D. E.  

International Journal of Electronics, Vol. 86, Iss. 10, 1999-10 ,pp. : 1153-1168

Taylor & Francis Ltd

Access to resources Recommend Favorite

Accurate Characterization of Silicon-On-Insulator MOSFETs for the Design of Low-Voltage, Low-Power RF Integrated Circuits

By Raskin J.-P.  

Analog Integrated Circuits and Signal Processing, Vol. 25, Iss. 2, 2000-11 ,pp. : 133-155

Springer Publishing Company

Access to resources Recommend Favorite

Temperature dependence of the structural properties of amorphous silicon oxynitride layers

By Abu El-Oyoun M.   Inokuma T.   Kurata Y.   Hasegawa S.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1669-1676

Elsevier

Access to resources Recommend Favorite

Prediction of temperature in silicon chip with non-uniform power: a Lagrangian interpolation approach

By Goh Teck Joo   Seetharamu K.N.   Quadir G.A.   Zainal Z.A.   Jeevan K  

Microelectronics International, Vol. 21, Iss. 2, 2004-02 ,pp. : 29-35

Emerald Group Publishing Ltd

Access to resources Recommend Favorite