Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

Author： Dueñas S.   Castán E.   Quintanilla L.   Enríquez L.   Barbolla J.   Lora-Tamayo E.   Montserrat J.  

Publisher： Maney Publishing

ISSN： 1743-2847

Source： Materials Science and Technology, Vol.11, Iss.10, 1995-10, pp. : 1074-1078

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