Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln0·25Ga0·75As/Al0·3Ga0·7As high electron mobility transistors

Author: Haddab Y.   Py M. A.   Bonard J.-M.   Bühlmann H.-J.   lIegems M.  

Publisher: Maney Publishing

ISSN: 1743-2847

Source: Materials Science and Technology, Vol.11, Iss.10, 1995-10, pp. : 1079-1082

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