Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

Author: Pressel K.   Nilsson S.   Wetzel C.   Volm D.   Meyer B. K.   Loa I.   Thurian P.   Heitz R.   Hoffmann A.   Mokhov E. N.   Baranov P. G.  

Publisher: Maney Publishing

ISSN: 1743-2847

Source: Materials Science and Technology, Vol.12, Iss.1, 1996-01, pp. : 90-93

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content