Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

By Pressel K.   Nilsson S.   Wetzel C.   Volm D.   Meyer B. K.   Loa I.   Thurian P.   Heitz R.   Hoffmann A.   Mokhov E. N.   Baranov P. G.  

Materials Science and Technology, Vol. 12, Iss. 1, 1996-01 ,pp. : 90-93

Maney Publishing

Access to resources Recommend Favorite

High-quality, single-layered epitaxial graphene fabricated on 6H-SiC (0001) by flash annealing in Pb atmosphere and mechanism

By  

Nanotechnology, Vol. 26, Iss. 10, 2015-03 ,pp. : 105708-105714

IOP Publishing

Access to resources Recommend Favorite

Tip induced mechanical deformation of epitaxial graphene grown on reconstructed 6H–SiC(0001) surface during scanning tunneling and atomic force microscopy studies

By Meza José Antonio Morán   Lubin Christophe   Thoyer François   Cousty Jacques  

Nanotechnology, Vol. 26, Iss. 25, 2015-06 ,pp. : 255704-255710

IOP Publishing

Access to resources Recommend Favorite

Comparative study on structural and optical properties of nitrogen rich InN on Si(110) and 6H-SiC

By Amirhoseiny M   Hassan Z   Ng S S  

Surface Engineering, Vol. 29, Iss. 7, 2013-08 ,pp. : 561-565

Maney Publishing

Access to resources Recommend Favorite

Study of reaction process on Ni/4H–SiC contact

By Cao Y.   Nyborg L.   Yi D.-Q.   Jelvestam U.  

Materials Science and Technology, Vol. 22, Iss. 10, 2006-10 ,pp. : 1227-1234

Maney Publishing

Access to resources Recommend Favorite