Electronic properties of defects introduced in GaAs during sputter deposition of gold Schottky contacts

Author： Auret F. D.   Goodman S. A.   Leclerc Y.   Myburg G.   Schutte C.  

Publisher： Maney Publishing

ISSN： 1743-2847

Source： Materials Science and Technology, Vol.13, Iss.11, 1997-11, pp. : 945-948

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Fermi level pinning by metal Schottky contacts on n type GaAs

By Myburg G.   Meyer W. E.   Auret F. D.   Burger H.   Barnard W. O.  

Materials Science and Technology, Vol. 14, Iss. 12, 1998-12 ,pp. : 1269-1272

Maney Publishing

Access to resources Recommend Favorite

Impact of sputter deposition parameters on molybdenum nitride thin film properties

By Stöber L   Konrath J P   Krivec S   Patocka F   Schwarz S   Bittner A   Schneider M   Schmid U  

Journal of Micromechanics and Microengineering, Vol. 25, Iss. 7, 2015-07 ,pp. : 74001-74011

IOP Publishing

Access to resources Recommend Favorite

RECENT ADVANCES IN SPUTTER DEPOSITION

By Thornton J. A.  

Surface Engineering, Vol. 2, Iss. 4, 1986-01 ,pp. : 283-292

Maney Publishing

Access to resources Recommend Favorite

Nanotubes and nanowires: the effect of impurities and defects on their electronic properties

By Mozos Jose L.   Machado Eduardo   Hernandez Eduardo   Ordejon Pablo  

International Journal of Nanotechnology, Vol. 2, Iss. 1-2, 2005-04 ,pp. : 114-128

Inderscience Publishers

Access to resources Recommend Favorite

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

By Tomer D   Rajput S   Hudy L J   Li C H   Li L  

Nanotechnology, Vol. 26, Iss. 21, 2015-05 ,pp. : 215702-215708

IOP Publishing

Access to resources Recommend Favorite