The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD

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Chinese Physics Letters, Vol. 30, Iss. 2, 2013-02 ,pp. : 28101-28104

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The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

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Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

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Chinese Physics Letters, Vol. 27, Iss. 2, 2010-02 ,pp. : 27102-27104

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AlGaN Channel High Electron Mobility Transistors with an Al_xGa_1−xN/GaN Composite Buffer Layer

By Xiang-Dong Li   Jin-Cheng Zhang   Yu Zou   Xue-Zhi Ma   Chang Liu   Wei-Hang Zhang   Hui-Juan Wen   Yue Hao  

Chinese Physics Letters, Vol. 32, Iss. 7, 2015-07 ,pp. : 77205-77208

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GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer

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Chinese Physics Letters, Vol. 31, Iss. 2, 2014-02 ,pp. : 28101-28104

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