AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer

Author： Xiang-Dong Li   Jin-Cheng Zhang   Yu Zou   Xue-Zhi Ma   Chang Liu   Wei-Hang Zhang   Hui-Juan Wen   Yue Hao  

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|7|77205-77208

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.7, 2015-07, pp. : 77205-77208

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