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IOP Publishing

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Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates

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Technical Physics Letters, Vol. 36, Iss. 6, 2010-06 ,pp. : 504-506

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Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates

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SiH 2 , a critical study

By Kalemos Apostolos   Dunning Jr Thom H.   Mavridis Aristides  

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Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates

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Chinese Physics B, Vol. 23, Iss. 7, 2014-07 ,pp. : 76103-76108

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