Electrical, spectral and optical performance of yellow–green and amber micro-pixelated InGaN light-emitting diodes

Author： Gong Z Liu N Y Tao Y B Massoubre D Xie E Y Hu X D Chen Z Z Zhang G Y Pan Y B Hao M S Watson I M Gu E Dawson M D

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.27, Iss.1, 2012-01, pp. : 15003-15009

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes

By Fang Z. Reynolds D. Look D.

Journal of Electronic Materials, Vol. 29, Iss. 4, 2000-04 ,pp. : 448-451

Springer Publishing Company

Access to resources Recommend Favorite

Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

By Yan Lei Zhiqiang Liu Miao He Xiaoyan Yi Junxi Wang Jinmin Li Shuwen Zheng Shuti Li

Journal of Semiconductors, Vol. 36, Iss. 5, 2015-05 ,pp. : 54006-54009

IOP Publishing

Access to resources Recommend Favorite

Enhanced Performance of GaN-Based Green Light-Emitting Diodes with Gallium-Doped ZnO Transparent Conducting Oxide

By Oh Min-Suk Seo Inseok

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1232-1236

Springer Publishing Company

Access to resources Recommend Favorite

Effects of the growth pressure of a-plane InGaN/GaN multi-quantum wells on the optical performance of light-emitting diodes

By Song Keun-Man Park Jinsub

Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15010-15014

IOP Publishing

Access to resources Recommend Favorite

Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

By Cao X.A. Sandvik P.M. LeBoeuf S.F. Arthur S.D.

Microelectronics Reliability, Vol. 43, Iss. 12, 2003-12 ,pp. : 1987-1991

Elsevier

Access to resources Recommend Favorite