![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Cheetham K J Carrington P J Krier A Patel I I Martin F L
Publisher: IOP Publishing
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.27, Iss.1, 2012-01, pp. : 15004-15007
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Tomich D. Eyink K. Grazulis L. Brown G. Szmulowicz F. Mahalingam K. Seaford M. Kuo C. Hwang W. Lin C.
Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Critical Thickness of ZnTe on GaSb(211)B
By Chai J.
Journal of Electronic Materials, Vol. 41, Iss. 11, 2012-11 ,pp. :