Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x&ssty{/};γ-ray detectors

Author: Kosyachenko L A   Lambropoulos C P   Aoki T   Dieguez E   Fiederle M   Loukas D   Sklyarchuk O V   Maslyanchuk O L   Grushko E V   Sklyarchuk V M   Crocco J   Bensalah H  

Publisher: IOP Publishing

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.27, Iss.1, 2012-01, pp. : 15007-15017

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Abstract