Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

By Rodilla H   González T   Moschetti G   Grahn J   Mateos J  

Semiconductor Science and Technology, Vol. 26, Iss. 2, 2011-02 ,pp. : 25004-25010

IOP Publishing

Access to resources Recommend Favorite

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*

By Lefebvre Eric   Moschetti Giuseppe   Malmkvist Mikael   Desplanque Ludovic   Wallart Xavier   Grahn Jan  

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 35010-35016

IOP Publishing

Access to resources Recommend Favorite

A gate current 1/f noise model for GaN/AlGaN HEMTs

By  

Journal of Semiconductors, Vol. 35, Iss. 12, 2014-12 ,pp. : 124005-124009

IOP Publishing

Access to resources Recommend Favorite

Dual-gate AlGaN/GaN MIS-HEMTs using Si

By Gao Tao   Xu Ruimin   Zhang Kai   Kong Yuechan   Zhou Jianjun   Kong Cen   Dong Xun   Chen Tangsheng   Hao Yue  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115010-115014

IOP Publishing

Access to resources Recommend Favorite

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

By Wanjun Chen   Jing Zhang   Bo Zhang   Chen Kevin Jing  

Journal of Semiconductors, Vol. 34, Iss. 2, 2013-02 ,pp. : 24003-24006

IOP Publishing

Access to resources Recommend Favorite