Role of oxygen vacancies in visible emission and transport properties of indium oxide nanowires

Author： Gali Pradeep   Kuo Fang-Ling   Shepherd Nigel   Philipose U  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.27, Iss.1, 2012-01, pp. : 15015-15019

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electron transport in indium arsenide nanowires

By Dayeh Shadi A  

Semiconductor Science and Technology, Vol. 25, Iss. 2, 2010-02 ,pp. : 24004-24023

IOP Publishing

Access to resources Recommend Favorite

Low resistance indium tin oxide contact to n-GaAs nanowires

By Zhang J   Chia A C E   LaPierre R R  

Semiconductor Science and Technology, Vol. 29, Iss. 5, 2014-05 ,pp. : 54002-54006

IOP Publishing

Access to resources Recommend Favorite

Properties of Indium-Doped ZnO Films Prepared in an Oxygen-Rich Plasma

By Li Hui   Xie Erqing   Qiao Min   Pan Xiaojun   Zhang Yongzhe  

Journal of Electronic Materials, Vol. 36, Iss. 9, 2007-09 ,pp. : 1219-1223

Springer Publishing Company

Access to resources Recommend Favorite

Numerical Study of Effects of Scattering Processes on Transport Properties of Bi Nanowires

By Ichige Yuki  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 523-528

Springer Publishing Company

Access to resources Recommend Favorite

Numerical Study of Effect of Surface Potential on Transport Properties of Bi Nanowires

By Matsumoto Tsuyoshi  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 1260-1265

Springer Publishing Company

Access to resources Recommend Favorite