Galvanomagnetic properties and electronic structure of Pb_1−x−ySn_xV_yTe under pressure

Author： Skipetrov E P Golovanov A N Kovalev B B Knotko A V Slyn’ko E I Slyn’ko V E

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.27, Iss.1, 2012-01, pp. : 15019-15027

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electrical behavior of modulation-and delta-doped Al_xGa_{1 − x}As/In_yGa_{1 − y}As/GaAs PHEMT structures

By Galiev G. Vasil’evskii I. Klimov E. Mokerov V.

Russian Microelectronics, Vol. 35, Iss. 2, 2006-03 ,pp. : 67-73

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structural and Luminescent Properties of SiO_xN_y(Si) Nanocomposite Films

By Baru V. Bayliss S. Zhitov V. Zakharov L. Kartopu G. Pokalyakin V. Sapelkin A. Stepanov G. Timofeev A. Shevchenko O.

Russian Microelectronics, Vol. 34, Iss. 5, 2005-09 ,pp. : 272-278

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Plasma sputtering of polycrystalline Pb_1−xSn_xTe thin films grown on glass substrates using hot wall deposition

By Zimin S P Gorlachev E S Gremenok V F Tsyrelchuk I N Naumov V V Amirov I I Dubov G A

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75020-75026

IOP Publishing

Access to resources Recommend Favorite

Quantitative Auger Electron Spectroscopic Analysis of Hg_1−xCd_xTe

By Gaucher A. Martinez E. Baylet J. Cardinaud C.

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1255-1262

Springer Publishing Company

Access to resources Recommend Favorite

The effects of B and P impurities on the electronic and optical properties of Si_{1 − x}Ge_x nanowires

By Zhang Yixi Zhang Xi Lai Xin Xiang Gang

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75023-75029

IOP Publishing

Access to resources Recommend Favorite