Growth and properties of III–V compound semiconductor heterostructure nanowires

By Gao Q   Tan H H   Jackson H E   Smith L M   Yarrison-Rice J M   Zou Jin   Jagadish C  

Semiconductor Science and Technology, Vol. 26, Iss. 1, 2011-01 ,pp. : 14035-14044

IOP Publishing

Access to resources Recommend Favorite

Optical fingerprints of Y2 ordering in III-V ternary semiconductor alloys

By Chen Dongguo   Ravindra N.M.  

Semiconductor Science and Technology, Vol. 28, Iss. 6, 2013-06 ,pp. : 65012-65016

IOP Publishing

Access to resources Recommend Favorite

Advanced III-V HEMTs

By Thayne P.I.  

III-Vs Review, Vol. 16, Iss. 8, 2003-11 ,pp. : 48-51

Elsevier

Access to resources Recommend Favorite

Epi-n-ZnO/<100> Si, GaAs and InP by L-MBE: a novel approach for III-V devices

By Ramamoorthy K.   Sanjeeviraja C.   Jayachandran M.   Sankaranarayanan K.   Misra P.   Kukreja L.M.  

Materials Science in Semiconductor Processing, Vol. 6, Iss. 4, 2003-08 ,pp. : 219-224

Elsevier

Access to resources Recommend Favorite

Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

By Ščajev Patrik  

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 394-399

Springer Publishing Company

Access to resources Recommend Favorite