Publisher： Elsevier
Founded in： 1998
Total resources： 4
E-ISSN： 1873-4081
ISSN： 1369-8001
Subject：
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Materials Science in Semiconductor Processing
Menu
Anisotropic etching of the silicon crystal-surface free energy model
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.
Access to resources
Recommend
Texture of Cu and dilute binary Cu-alloy films: impact of annealing and solute content
By Barmak K., Gungor A., Rollett A.D., Cabral C., Harper J.M.E. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.A calculation of diffusion parameters for Cu/Ta and Ta/Si interfaces in Cu/Ta/Si(111) structure
By Moshfegh A.Z., Akhavan O. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.{311} Defect evolution in Si-implanted Si 1-x Ge x alloys
By Crosby R.T., Jones K.S., Law M.E., Larsen A.N., Hansen J.L. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.Seed layer corrosion of Damascene structures in copper sulfate electrolytes
By Martyak N.M., Ricou P. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.The effect of In doping on some physical properties of CdS films
By Atay F., Bilgin V., Akyuz I., Kose S. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.MOVPE growth of Si-doped GaAs and Al x Ga 1-x As using tertiarybutylarsine (TBA) in pure N 2 ambient
By Huang G.S., Tang X.H., Zhang B.L. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.By Ding F.-R., Vantomme A., He W.-H., Zhao Q., Pipeleers B., Jacobs K., Moerman I., Iakoubovskii K., Adriaenssens G.J. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.By Joung Y.H., Kim K.W., Kang S.J. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.Annealing and activation of silicon implanted in semi-insulating InP substrates
By Dong H.W., Zhao Y.W., Li J.M. in (2003)
Materials Science in Semiconductor Processing , Vol. 6, Iss. 4, 2003-08 , pp.
Previous
Next