Nanometer resolution stress measurement of the Si gate using illumination–collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe

Author: Hosaka Sumio   Aramomi Yusuke   Sone Hayato   Yin You   Sato Eiji   Tochigi Kenji  

Publisher: IOP Publishing

ISSN: 0957-4484

Source: Nanotechnology, Vol.22, Iss.2, 2011-01, pp. : 25206-25212

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