GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Author： Weber Joel C   Blanchard Paul T   Sanders Aric W   Gertsch Jonas C   George Steven M   Berweger Samuel   Imtiaz Atif   Coakley Kevin J   Wallis Thomas M   Bertness Kris A   Kabos Pavel   Sanford Norman A   Bright Victor M  

Publisher： IOP Publishing

ISSN： 0957-4484

Source： Nanotechnology, Vol.25, Iss.41, 2014-10, pp. : 415502-415508

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

By  

Nanotechnology, Vol. 26, Iss. 1, 2015-01 ,pp. : 14002-14008

IOP Publishing

Access to resources Recommend Favorite

Nanometer resolution stress measurement of the Si gate using illumination–collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe

By Hosaka Sumio   Aramomi Yusuke   Sone Hayato   Yin You   Sato Eiji   Tochigi Kenji  

Nanotechnology, Vol. 22, Iss. 2, 2011-01 ,pp. : 25206-25212

IOP Publishing

Access to resources Recommend Favorite

The Effect of Channel Width on the Performance of AlGaN/GaN Nanowire Field Effect Transistors

By Kang Min-Seok   Lee Jung-Ho   Lee Hyung-Seok   Koo Sang-Mo  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 10, 2013-10 ,pp. : 7042-7045

American Scientific Publishers

Access to resources Recommend Favorite

Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy

By  

Nanotechnology, Vol. 26, Iss. 34, 2015-01 ,pp. : 344002-344011

IOP Publishing

Access to resources Recommend Favorite

High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems

By Oliver R. A.   Galtrey M. J.   Humphreys C. J.  

Materials Science and Technology, Vol. 24, Iss. 6, 2008-06 ,pp. : 675-681

Maney Publishing

Access to resources Recommend Favorite