Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots

Author： Chen Hung-Ming Kuan Chieh-Hsiung Suen Yuen-Wuu Luo Guang-Li Lai Yen-Pu Wang Fu-Min Chen Shih-Ta

ISSN： 0957-4484

Source： Nanotechnology, Vol.23, Iss.1, 2012-01, pp. : 15303-15308

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates

Nanotechnology, Vol. 25, Iss. 47, 2014-11 ,pp. : 475301-475306

IOP Publishing

Access to resources Recommend Favorite

Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates

By Brehm Moritz Grydlik Martyna Tayagaki Takeshi Langer Gregor Schäffler Friedrich Schmidt Oliver G

Nanotechnology, Vol. 26, Iss. 22, 2015-06 ,pp. : 225202-225212

IOP Publishing

Access to resources Recommend Favorite

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate

By J Y Zhong Z Yang X J Fan Y L Jiang Z M

Nanotechnology, Vol. 24, Iss. 1, 2013-01 ,pp. : 15304-15310

IOP Publishing

Access to resources Recommend Favorite

Fabrication of SiGe quantum wires and dots by low pressure chemical vapour deposition on patterned silicon substrates

By Hartmann A. Vescan L. Dieker C. Lüth H.

Materials Science and Technology, Vol. 11, Iss. 4, 1995-04 ,pp. : 410-415

Maney Publishing

Access to resources Recommend Favorite

Undoped accumulation-mode Si/SiGe quantum dots

By BorselliM G EngK RossR S HazardT M HolabirdK S HuangB KiselevA A DeelmanP W WarrenL D MilosavljevicI SchmitzA E SokolichM GyureM F HunterA T

Nanotechnology, Vol. 26, Iss. 37, 2015-09 ,pp. : 375202-375206

IOP Publishing

Access to resources Recommend Favorite