On the formation of voids, etched holes, and GaO particles configuration during the nanowires growth by VLS method on GaAs substrate

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Journal of Materials Science: Materials in Electronics, Vol. 24, Iss. 7, 2013-07 ,pp. : 2513-2520

Springer Publishing Company

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The influences of technological conditions and Au cluster islands on morphology of Ga₂O₃ nanowires grown by VLS method on GaAs substrate

By Dao Khac   Phan Anh   Do Hung   Luu Tien   Falke Meiken   MacKenzie M.  

Journal of Materials Science: Materials in Electronics, Vol. 22, Iss. 2, 2011-02 ,pp. : 204-216

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GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia

By Callahan M.   Wang B.-G.   Rakes K.   Bliss D.   Bouthillette L.   Suscavage M.   Wang S.-Q.  

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The near-infrared photoluminescence of GaAs epilayers grown on Si

By Liang J.   Li P.   Gao Y.   Zhao J.  

Journal of Materials Science, Vol. 32, Iss. 16, 1997-12 ,pp. : 4377-4382

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Effect of Ga Pre-Deposition Rate on GaAs Nanowires Grown by Self-Assisted VLS Method Using MBE on SiO₂/Si(111) Substrates

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