On the formation of voids, etched holes, and GaO particles configuration during the nanowires growth by VLS method on GaAs substrate

Author: Dao Khac  

Publisher: Springer Publishing Company

ISSN: 0957-4522

Source: Journal of Materials Science: Materials in Electronics, Vol.24, Iss.7, 2013-07, pp. : 2513-2520

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Abstract