Cracking mechanism in AlN(11—20)/α-Al2O3(1—102) heteroepitaxial films grown by MOCVD

Author: Kaigawa K.   Shibata T.   Nakamura Y.   Asai K.   Tanaka M.   Sakai H.   Tsurumi T.  

Publisher: Springer Publishing Company

ISSN: 0022-2461

Source: Journal of Materials Science, Vol.36, Iss.19, 2001-10, pp. : 4649-4659

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Abstract