Cracking mechanism in AlN(11—20)/α-Al2O3(1—102) heteroepitaxial films grown by MOCVD

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Journal of Materials Science, Vol. 36, Iss. 19, 2001-10 ,pp. : 4649-4659

Springer Publishing Company

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Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN

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Surface failure mode evaluation of pure AlN and AlN with Al₂O₃(0.1 μm) oxide layer by microscratch testing

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Journal of Materials Science, Vol. 40, Iss. 21, 2005-11 ,pp. : 5703-5710

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Effect of AlN and Al2O3 additions on the phase relationships and morphology of SiC Part I Compositions and properties

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Journal of Materials Science, Vol. 34, Iss. 22, 1999-11 ,pp. : 5605-5612

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Effect of AlN and Al2O3 additions on the phase relationships and morphology of SiC Part II: Microstructural observations

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Journal of Materials Science, Vol. 34, Iss. 22, 1999-11 ,pp. : 5613-5621

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