p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing

By Park S. H.   Kang T. W.   Kim T. W.  

Journal of Materials Science, Vol. 39, Iss. 20, 2004-10 ,pp. : 6353-6355

Springer Publishing Company

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Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

By Kim N. H.   Kang T. W.   Kim T. W.  

Journal of Materials Science, Vol. 39, Iss. 20, 2004-10 ,pp. : 6343-6345

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Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

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Journal of Materials Science, Vol. 40, Iss. 20, 2005-10 ,pp. : 5533-5535

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Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique

By Cai L. C.   Chen H.   Bao C. L.   Huang Q.   Zhou J. M.  

Journal of Materials Science, Vol. 39, Iss. 7, 2004-04 ,pp. : 2637-2640

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Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates

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Journal of Materials Science: Materials in Electronics, Vol. 16, Iss. 2, 2005-02 ,pp. : 107-110

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