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Journal of Materials Science, Vol. 16, Iss. 2, 2005-02 ,pp. : 107-110

Springer Publishing Company

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Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

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Journal of Materials Science, Vol. 40, Iss. 20, 2005-10 ,pp. : 5533-5535

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Reduction of dislocation density in GaN films on sapphire using AIN interlayers

By Chaudhuri J.   George J.T.   Kolske D.D.   Wickenden A.E.   Henry R.L.   Rek Z.  

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Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition

By Keller S.   Waltereit P.   Cantu P.   Mishra U.K.   Speck J.S.   DenBaars S.P.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 187-195

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Morphology and optical properties of GaAs layers grown on (1 1 1)A GaAs substrates in N₂ ambient by metalorganic chemical vapor deposition

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