Simulation of doping levels and deep levels in InGaN-based single-junction solar cell

Author： Lin Shuo   Zeng Shengwei   Cai Xiaomei   Zhang Jiangyong   Wu Shaoxiong   Sun Li   Zhang Baoping  

Publisher： Springer Publishing Company

ISSN： 0022-2461

Source： Journal of Materials Science, Vol.47, Iss.11, 2012-06, pp. : 4595-4603

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