Deep levels in 4H-SiC layers grown by sublimation epitaxy

Author： Syvajarvi M.   Yakimova R.   Ciechonski R.R.   Kakanakova-Georgieva A.   Storasta L.   Janzen E.  

Publisher： Elsevier

ISSN： 0925-3467

Source： Optical Materials, Vol.23, Iss.1, 2003-07, pp. : 61-64

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD

By  

Advanced Materials Research, Vol. 2015, Iss. 1096, 2015-05 ,pp. : 22-26

Trans Tech Publications

Access to resources Recommend Favorite

The Crystalline quality of lnxAl1 - xAs layers on lnP grown by molecular beam epitaxy at 520°C

By Choi J.S.   Oh T.S.   Choo W.K.  

Journal of Materials Science, Vol. 35, Iss. 3, 2000-02 ,pp. : 655-660

Springer Publishing Company

Access to resources Recommend Favorite

Influence of post-deposition annealing in oxygen ambient on metal-organic decomposed CeO 2 film spin coated on 4H-SiC

By Lim Way  

Journal of Materials Science: Materials in Electronics, Vol. 23, Iss. 1, 2012-01 ,pp. : 257-266

Springer Publishing Company

Access to resources Recommend Favorite

Temperature-dependent electrical properties of plasma-grown gate oxides on tensile-strained Si0.993 C0.007 layers

By Mahapatra R.   Kar G.S.   Ray S.K.   Maikap S.  

Journal of Materials Science: Materials in Electronics, Vol. 15, Iss. 1, 2004-01 ,pp. : 43-46

Springer Publishing Company

Access to resources Recommend Favorite

Reactive metallic layers produced on AlN, Si3N4 and SiC ceramics

By Olesińska W.   Pawłowska M.   Kaliński D.   Chmielewski M.  

Journal of Materials Science: Materials in Electronics, Vol. 15, Iss. 12, 2004-12 ,pp. : 813-817

Springer Publishing Company

Access to resources Recommend Favorite