Characterization of Oxides Formed on InP, InGaAs, InAlAs, and InGaAs/InAlAs Heterostructures at 300–500°C

Author： Hussey R.J.   Sproule G.I.   McCaffrey J.P.   Graham M.J.  

Publisher： Springer Publishing Company

ISSN： 0030-770X

Source： Oxidation of Metals, Vol.57, Iss.5-6, 2002-06, pp. : 427-447

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Research on the radiation exposure “memory effects” in AlGaAs heterostructures

By  

IOP Conference Series: Materials Science and Engineering, Vol. 81, Iss. 1, 2015-04 ,pp. : 42-48

IOP Publishing

Access to resources Recommend Favorite

Studies of Diffusion Processes in AlAs/GaAs Resonant-Tunneling Heterostructures

By  

Key Engineering Materials, Vol. 2016, Iss. 724, 2017-02 ,pp. : 48-52

Trans Tech Publications

Access to resources Recommend Favorite

Optical absorption and fluorescence spectral studies of Sm3+ ion in BaO-M2O3 (M Ga, Al, In)-P2O5 glass systems

By  

IOP Conference Series: Materials Science and Engineering, Vol. 2, Iss. 1, 2009-07 ,pp. : 216-220

IOP Publishing

Access to resources Recommend Favorite

Optical Characterization of Quaternary AlInGaN Multiquantum Wells

By  

Key Engineering Materials, Vol. 2017, Iss. 748, 2017-09 ,pp. : 111-115

Trans Tech Publications

Access to resources Recommend Favorite

Ellipsometric study of GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

By  

IOP Conference Series: Materials Science and Engineering, Vol. 60, Iss. 1, 2014-06 ,pp. : 510-515

IOP Publishing

Access to resources Recommend Favorite