Studies of Diffusion Processes in AlAs/GaAs Resonant-Tunneling Heterostructures

E-ISSN： 1662-9795|2016|724|48-52

ISSN： 1013-9826

Source： Key Engineering Materials, Vol.2016, Iss.724, 2017-02, pp. : 48-52

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Research on the radiation exposure “memory effects” in AlGaAs heterostructures

IOP Conference Series: Materials Science and Engineering, Vol. 81, Iss. 1, 2015-04 ,pp. : 42-48

IOP Publishing

Access to resources Recommend Favorite

Characterization of Oxides Formed on InP, InGaAs, InAlAs, and InGaAs/InAlAs Heterostructures at 300–500°C

By Hussey R.J. Sproule G.I. McCaffrey J.P. Graham M.J.

Oxidation of Metals, Vol. 57, Iss. 5-6, 2002-06 ,pp. : 427-447

Springer Publishing Company

Access to resources Recommend Favorite

Ellipsometric study of GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

IOP Conference Series: Materials Science and Engineering, Vol. 60, Iss. 1, 2014-06 ,pp. : 510-515

IOP Publishing

Access to resources Recommend Favorite

Be diffusion in GaN

By Chang S.J. Lai W.C. Chen J.F. Chen S.C. Huang B.R. Liu C.H. Liaw U.H.

Materials Characterization, Vol. 49, Iss. 4, 2002-11 ,pp. : 337-341

Elsevier

Access to resources Recommend Favorite

Influence of Ion Nitriding Regimes on Diffusion Processes in Titanium Alloy Ti-6Al-4V

Defect and Diffusion Forum, Vol. 2018, Iss. 383, 2018-03 ,pp. : 161-166

Trans Tech Publications

Access to resources Recommend Favorite