Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates

Author： Davies S.   Huang T. S.   Murray R. T.   Gass M. H.   Papworth A. J.   Joyce T. B.   Chalker P. R.  

Publisher： Springer Publishing Company

ISSN： 0957-4522

Source： Journal of Materials Science: Materials in Electronics, Vol.15, Iss.11, 2004-11, pp. : 705-710

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