Effect of thermal annealing on the structural and the optical properties of (Zn_1−xCo_x)O thin films grown on p-Si (1 0 0) substrates

By KIM D.   CHO W.   KIM T.  

Journal of Materials Science, Vol. 40, Iss. 3, 2005-02 ,pp. : 769-771

Springer Publishing Company

Access to resources Recommend Favorite

Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si<1 0 0>

By Venkataraman V.   Rajagopalan S.   Manoravi P.   Balamurugan A.K.   Ramalingam A.   Tyagi A.K.  

Materials Research Bulletin, Vol. 38, Iss. 14, 2003-11 ,pp. : 1835-1840

Elsevier

Access to resources Recommend Favorite

Effect of ZnO buffer layer on AZO film properties and photovoltaic applications

By Shi J.   Huang S.   Chu J.   Zhu H.   Wang Z.   Li X.   Zhang D.   Sun Z.   Cheng W.   Huang F.   Yin X.  

Journal of Materials Science: Materials in Electronics, Vol. 21, Iss. 10, 2010-10 ,pp. : 1005-1013

Springer Publishing Company

Access to resources Recommend Favorite

Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN

By Hu G.  

Journal of Materials Science Letters, Vol. 22, Iss. 22, 2003-11 ,pp. : 1581-1583

Springer Publishing Company

Access to resources Recommend Favorite

Genetic Algorithm Application to the Structural Properties of Si-Ge Mixed Clusters

By Dugan Nazim   Erkoc Sakir  

Materials and Manufacturing Processes, Vol. 24, Iss. 3, 2009-03 ,pp. : 250-254

Taylor & Francis Ltd

Access to resources Recommend Favorite